Title :
CMOS on local SOI using SIMOX technology
Author :
Matsumoto, Shinichi ; Ohno, Tetsufumi ; Izumi, Kiyotaka
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
CMOS on local SOI, in which n-MOS/bulk and p-MOS/SOI can be selectively implemented on the same chip, has been developed. SOI regions are formed by SIMOX technology, while bulk regions are prepared by etching of the buried SiO2. A CMOS inverter fabricated on local SOI shows good transfer characteristics.
Keywords :
CMOS integrated circuits; integrated circuit technology; CMOS inverter; CMOS on local SOI; SIMOX technology; Si-SiO2; buried SiO2; transfer characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870412
