DocumentCode
1033056
Title
A hybrid cryotron technology: II--Fabrication
Author
Adams, C.N. ; Bremer, J.W. ; Oka, A.K. ; Ummel, M.L.
Author_Institution
General Electric Company, Sunnyvale, Calif.
Volume
2
Issue
3
fYear
1966
fDate
9/1/1966 12:00:00 AM
Firstpage
385
Lastpage
389
Abstract
A hybrid thin-film cryotron fabrication technology utilizing a combination of stencil masking and photo-etching methods to achieve high-density (100 active devices per square centimeter) arrays of interconnected active devices is described. Stencil masks are used to delineate the superconducting shield plane, the cryotron gates, some interelement connections, and the intercircuit insulation. Photo-etching is used to form the uppermost layer of the cryotron array. This uppermost layer contains the most dimensionally critical segments of the circuit, the cryotron control elements and also the remainder of the device-to-device interconnections. Fabrication equipment has been developed for both laboratory and prototype manufacturing. Cryogenic test data collected from over 100 cryotron arrays, containing 1863 active interconnected devices per substrate, show that this hybrid fabrication process is consistently capable of producing substrates with elemental yields in excess of 99.9 percent. Substrates containing in excess of 10 000 active interconnected devices are now entering design, fabrication, and test.
Keywords
Content-addressable memory (CAM); Logic circuits; Superconducting memories; Fabrication; Insulation; Integrated circuit interconnections; Laboratories; Manufacturing; Prototypes; Substrates; Superconducting epitaxial layers; Superconducting thin films; Thin film devices;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1966.1065842
Filename
1065842
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