Title :
Observation of voltage contrast in scanning ion microscopy of integrated circuits
Author :
Kirk, E.C.G. ; Cleaver, J.R.A. ; Ahmed, Hameeza
Author_Institution :
University of Cambridge, Microelectronics Research Group, Cavendish Laboratory, Cambridge, UK
Abstract :
Strong voltage contrast effects have been observed in scanning ion microscopy of integrated circuits. The ion beam has also been used to cut microsections in integrated circuits, with precise control of position and depth. The voltage distributions in these sections can be observed.
Keywords :
failure analysis; ion microscopy; monolithic integrated circuits; control of depth; control of position; cut microsections; in situ microsectioning; scanning ion microscopy of integrated circuits; voltage contrast;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870420
