Title :
Fowler-Nordheim tunneling into thermally grown SiO2
Author :
Lenzlinger, M. ; Snow, E.H.
fDate :
9/1/1968 12:00:00 AM
Keywords :
Charge carrier processes; Conductivity; Electron emission; Electron traps; Ferroelectric materials; Insulation; Interface states; Laboratories; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16430
