Title :
Polarisation-independent InGaAsP/InGaAsP MQW waveguide electroabsorption modulator
Author :
Campi, D. ; Cacciatore, C. ; Neitzert, Heinz-Christoph ; Coriasso, C. ; Rigo, C. ; Stano, A.
Author_Institution :
CSELT, Torino
fDate :
2/17/1994 12:00:00 AM
Abstract :
Polarisation-independent operation of an unstrained InGaAsP/InGaAsP multiquantum well electroabsorption modulator is reported. Contrast ratios of 20 and 30 dB for 400 μm long devices have been achieved at 2.0 and 5.5V reverse bias voltage, respectively, with on-state attenuation less that 2 dB and at 1.55 μm wavelength. Polarisation sensitivity at these voltage values is found to vanish
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; light polarisation; optical modulation; optical waveguides; semiconductor quantum wells; 1.55 mum; 2 V; 400 mum; 5.5 V; Frank-Keldysh effect; InGaAsP-InGaAsP; InGaAsP/InGaAsP MQW waveguide electroabsorption modulator; contrast ratios; on-state attenuation; photocurrent spectra; polarisation-independent operation; reverse bias voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940231
