Title :
Barrier height enhancement of Au Schottky junctions on phosphine-plasma treated n-AlInAs
Author :
Sugino, Takushi ; Yamamura, I. ; Shirafuji, J.
Author_Institution :
Dept. of Electr. Eng., Osaka Univ.
fDate :
2/17/1994 12:00:00 AM
Abstract :
The effect of surface phosphidisation on the barrier height of Au/AlInAs (Al 48%) Schottky diodes was studied. The surface of AlInAs is treated with phosphine (PH3) plasma at 250°C. Schottky junctions formed on the phosphidised AlInAs employ a metal insulator-semiconductor (MIS) structure due to the existence of phosphorus related layers deposited on the AlInAs surface. An effective barrier height as high as O.82eV was successfully obtained for the Au/n-AlInAs Schottky junction with a true barrier height of 0.74eV which is close to the ideal barrier height expected for the Schottky-Mott model. Owing to the enhanced barrier height, the reverse leakage current can be reduced by more than four orders of magnitude in comparison with that of conventional diodes
Keywords :
III-V semiconductors; Schottky-barrier diodes; aluminium compounds; gold; indium compounds; leakage currents; metal-insulator-semiconductor structures; passivation; plasma applications; semiconductor-metal boundaries; 0.74 eV; 0.82 eV; 250 C; Au Schottky junctions; Au-AlInAs; Au/AlInAs Schottky diodes; MIS structure; PH3; PH3 plasma; Schottky junctions; barrier height enhancement; metal insulator-semiconductor structure; phosphidised AlInAs; phosphine-plasma treated n-AlInAs; reverse leakage current; surface phosphidisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940213
