• DocumentCode
    1033107
  • Title

    Effect of NH3 nitridation on time-dependent dielectric breakdown characteristics of heavily oxynitrided tunnel oxide films

  • Author

    Arakawa, Takeshi ; Fukada, H.

  • Author_Institution
    Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo
  • Volume
    30
  • Issue
    4
  • fYear
    1994
  • fDate
    2/17/1994 12:00:00 AM
  • Firstpage
    361
  • Lastpage
    362
  • Abstract
    The effects of NH3 nitridation temperature (800-1000°C) and time (15-90 s) in a dry oxidation NH3-nitridation-N2O oxynitridation sequence on the time-dependent dielectric breakdown (TDDB) characteristics of oxynitrided SiO2 films are investigated. It is found that high-temperature (1000°C) and short-time (30 sec) NH3 nitridation gives excellent TDDB characteristics
  • Keywords
    ammonia; dielectric thin films; electric breakdown of solids; metal-insulator-semiconductor structures; nitridation; oxidation; silicon compounds; 15 to 90 s; 800 to 1000 C; NH3; NH3 nitridation; SiO2-Si3N4-SiO2-Si; heavily oxynitrided tunnel oxide films; nitridation; oxynitridation; oxynitrided SiO2 films; time-dependent dielectric breakdown characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940236
  • Filename
    267334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1033107