Title :
Ion implantation doping of Si with 70 to 300 keV B, P, and As
fDate :
9/1/1968 12:00:00 AM
Keywords :
Doping; Extinction ratio; Gallium arsenide; Ion implantation; Laboratories; Laser beams; Optical attenuators; Optical modulation; Optical polarization; Radio frequency;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16439
