DocumentCode
1033156
Title
Ion implantation doping of Si with 70 to 300 keV B, P, and As
Author
Crowder, B.L.
Volume
15
Issue
9
fYear
1968
fDate
9/1/1968 12:00:00 AM
Firstpage
687
Lastpage
687
Keywords
Doping; Extinction ratio; Gallium arsenide; Ion implantation; Laboratories; Laser beams; Optical attenuators; Optical modulation; Optical polarization; Radio frequency;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1968.16439
Filename
1475341
Link To Document