DocumentCode
1033158
Title
Reappearance of plasma induced oxide charge under Fowler-Nordheim stress
Author
Li, Xin ; Hsu, J.-T. ; Aum, P. ; Chan, Daniel ; Viswanathan, C.R.
Author_Institution
Dept. of Electr. Eng., California State Univ., Los Angeles, CA
Volume
30
Issue
4
fYear
1994
fDate
2/17/1994 12:00:00 AM
Firstpage
367
Lastpage
368
Abstract
The effect of plasma charging in thin gate oxide was studied under both polarities of Fowler-Nordheim (F-N) charge injection. The authors found that, although plasma induced oxide charge was temporarily removed, it reappears after F-N current injection. The results reveal that electron traps are created in nMOSFETs, whereas hole traps are created in pMOSFETs due to the plasma etching in the process
Keywords
electron traps; high field effects; hole traps; insulated gate field effect transistors; insulating thin films; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; sputter etching; Fowler-Nordheim stress; LDD MOSFET; charge injection; electron traps; hole traps; nMOSFETs; pMOSFETs; plasma charging; plasma etching; plasma induced oxide charge; thin gate oxide;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940203
Filename
267338
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