• DocumentCode
    1033179
  • Title

    CW performance and life of 1.3μm InGaAsP/InP lasers emitting at high facet power densities

  • Author

    Murison, R.F. ; Houghton, A.J.N. ; Goodwin, A.R. ; Collar, A.J. ; Davies, I.G.A.

  • Author_Institution
    STC Defence Systems Ltd., Paignton, UK
  • Volume
    23
  • Issue
    11
  • fYear
    1987
  • Firstpage
    601
  • Lastpage
    603
  • Abstract
    Individual stripe InGaAsP/lnP lasers emitting in a single spatial mode have been operated for times in excess of 7000 h at constant output power levels up to 40 mW (NA 0.5) with no significant increase in drive current and at 60 mW (NA 0.5) with drive current increases of typically 1.2%/1000h. Units have been operated short-term at values of output power and facet flux density of 263 mW and 20MW/cm2, respectively, and life-tested at a constant power of 90 mW (NA 0.5) for times in excess of 6300 h. These results demonstrate the resistance of this laser material to facet degradation, and show a clear advantage over GaAlAs/GaAs lasers of comparable structure which typically show catastrophic facet damage at flux densities of 2-4 MW/cm2.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; life testing; optical communication equipment; semiconductor junction lasers; 1.3 micron; 263 mW; 40 mW; 7000 h; CW performance; InGaAsP-InP lasers; constant output power levels; drive current; high facet power densities; semiconductors; single spatial mode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870431
  • Filename
    4257763