• DocumentCode
    1033235
  • Title

    Dislocations and their effect on photoluminescence efficiency in GaAs1-xPx

  • Author

    Stringfellow, G.B. ; Greene, P.E.

  • Volume
    15
  • Issue
    9
  • fYear
    1968
  • fDate
    9/1/1968 12:00:00 AM
  • Firstpage
    687
  • Lastpage
    687
  • Keywords
    Capacitance-voltage characteristics; Detectors; Gallium arsenide; Ion implantation; Laboratories; PIN photodiodes; Photodetectors; Photoluminescence; Schottky diodes; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1968.16447
  • Filename
    1475349