DocumentCode
1033235
Title
Dislocations and their effect on photoluminescence efficiency in GaAs1-x Px
Author
Stringfellow, G.B. ; Greene, P.E.
Volume
15
Issue
9
fYear
1968
fDate
9/1/1968 12:00:00 AM
Firstpage
687
Lastpage
687
Keywords
Capacitance-voltage characteristics; Detectors; Gallium arsenide; Ion implantation; Laboratories; PIN photodiodes; Photodetectors; Photoluminescence; Schottky diodes; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1968.16447
Filename
1475349
Link To Document