Title :
Dislocations and their effect on photoluminescence efficiency in GaAs1-xPx
Author :
Stringfellow, G.B. ; Greene, P.E.
fDate :
9/1/1968 12:00:00 AM
Keywords :
Capacitance-voltage characteristics; Detectors; Gallium arsenide; Ion implantation; Laboratories; PIN photodiodes; Photodetectors; Photoluminescence; Schottky diodes; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16447
