Title :
Noise in epitaxial silicon bulk unipolar diodes
Author :
Werres, C. ; Vescan, L. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
Silicon camel diodes with barrier heights in the range 0.46¿0.94 eV were realised by means of low-pressure vapour phase epitaxy (LPVPE). These diodes show a conversion loss as low as 4.2 dB at 2 GHz and a noise figure of 4.8 dB.
Keywords :
electron device noise; elemental semiconductors; semiconductor diodes; silicon; solid-state microwave devices; vapour phase epitaxial growth; 0.46 to 0.94 eV; 2 GHz; 4.2 dB; LPVPE; Si; VPE growth; barrier heights; bulk unipolar diodes; camel diodes; conversion loss; elemental semiconductors; low-pressure vapour phase epitaxy; solid state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870439
