DocumentCode

1033279

Title

Charge storage effects in p-i-n diodes containing a large trap density

Author

Panousis, P.T.

Volume

15

Issue

9

fYear

1968

fDate

9/1/1968 12:00:00 AM

Firstpage

688

Lastpage

688

Keywords

Doping; Electron traps; Gallium arsenide; P-i-n diodes; Plasma temperature; Schottky barriers; Schottky diodes; Silicon; Voltage; Zinc compounds;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1968.16452

Filename

1475354