Title :
High-frequency InGaAs/InP multiple-quantum-well buried-mesa electroabsorption optical modulator
Author :
Koren, U. ; Miller, B.I. ; Tucker, R.S. ; Eisenstein, G. ; Bar-Joseph, I. ; Miller, D.A.B. ; Chemla, D.S.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
We describe the structure and performance characteristics of an InGaAs/InP multiple-quantum-well (MQW) electro-absorption buried-mesa optical modulator. The device is fabricated with two metal-organic chemical-vapour-deposition (MOCVD) growth steps, wherein small-area circular (40¿m diameter) PIN diodes are buried with Fe-doped semiinsulating (SI) InP regrowth. The modulator has a relatively low insertion loss (4.5 dB) with 25% modulation depth and very high modulation bandwith (5.3 GHz) operating at 1.62¿m wavelength.
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; optical communication equipment; optical modulation; semiconductor superlattices; vapour phase epitaxial growth; 1.62 micron; 4.5 dB; 40 micron; 5.3 GHz; HF operation; III-V semiconductors; InGaAs-InP; MOCVD; MQW; PIN diodes; electro-optical device; electroabsorption optical modulator; insertion loss; metal-organic chemical-vapour-deposition; modulation bandwith; multiple-quantum-well buried-mesa; optical communication device; semiinsulating InP:Fe regrowth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870445
