Title :
Low-drive-current, high-efficiency AlGaAs/GaAs SQW laser
Author :
Nobuhara, H. ; Fujii, Teruya ; Wada, O.
Author_Institution :
Fujitsu Laboratories, Atsugi, Japan
Abstract :
A low-drive-current AlGaAs/GaAs SQW laser, which exhibits extremely low threshold currents of 2.8 mA at room temperature and 0.35 mA at 77 K together with high differential efficiencies of 0.75 mW/mA/facet, has been demonstrated. Experimental results of the effect of both the mirror reflectivity and the cavity length on reducing the threshold current of the SQW lasers have indicated the feasibility of submilliampere lasing at room temperature.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 0.35 mA; 2.8 mA; 77 K; AlGaAs-GaAs; III-V semiconductors; SQW lasers; cavity length; differential efficiencies; low-drive-current; mirror reflectivity; room temperature; single quantum well laser; submilliampere lasing; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870461
