Title :
A compact satellite 1 GHz tuner with GaAs ICs
Author :
Yamamoto, A. ; Katagishi, M. ; Sakuta, K. ; Akitake, I. ; Shinkawa, K. ; Yamada, S. ; Shingawa, M.
Author_Institution :
Hitachi Ltd., Yokohama, Japan
fDate :
8/1/1989 12:00:00 AM
Abstract :
The authors have designed two types of GaAs ICs, an RF amplifier and a converter. The amplifier has a stable input impedance. The converter has two AGC (automatic gain control) system (RF and IF AGC) and a wide input signal range with a good intermodulation characteristic. These ICs make full use of the good input versus output linearity and high mobility of a GaAs MESFET and have been integrated into a small chip. Using these ICs, the authors have developed a 1-GHz satellite tuner. This tuner can receive the 0.95-1.75-GHz BS frequency band and offers novel functions such as reception of two satellite broadcasting signals. The components of this tuner can be reduced by using GaAs ICs, making the most compact tuner to date (40 cm3)
Keywords :
III-V semiconductors; broadcasting; field effect integrated circuits; gallium arsenide; satellite relay systems; tuning; 0.95 to 1.75 GHz; 1 GHz; BS frequency band; GaAs; IC; IF AGC; III-V semiconductors; MESFET; UHF; automatic gain control; high mobility; input impedance; intermodulation characteristic; satellite broadcasting signals; satellite tuner; wide input signal range; Frequency; Gallium arsenide; MESFETs; RF signals; Radiofrequency amplifiers; Radiofrequency integrated circuits; Satellite broadcasting; TV broadcasting; Tuned circuits; Tuners;
Journal_Title :
Consumer Electronics, IEEE Transactions on
