Title :
Nondiffusion and 1.54 μm luminescence of erbium implanted in InP
Author :
Favennec, P.N. ; L´Haridon, H. ; Le Corre, A. ; Salvi, M. ; Gauneau, M.
Author_Institution :
CNET, LAB/JCM, Lannion, France
Abstract :
Erbium impurities were implanted in indium phosphide. The Er depth distributions are given for nonannealed and annealed substrates. It is shown that erbium has a very small diffusion coefficient, if any, in InP. The photoluminescence spectra show, after annealing at high temperature, the main erbium emission centred at 1.536μm. This emission is stronger after annealing at 700°C. Our results are the first evidence showing l.54μm emission at room temperature.
Keywords :
III-V semiconductors; annealing; erbium; indium compounds; ion implantation; photoluminescence; 1.54 micron; 700 C; InP:Er; annealed substrates; annealing temperature; diffusion coefficient; emission at room temperature; ion implantation; photoluminescence spectra;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870488
