DocumentCode
1033737
Title
Nondiffusion and 1.54 μm luminescence of erbium implanted in InP
Author
Favennec, P.N. ; L´Haridon, H. ; Le Corre, A. ; Salvi, M. ; Gauneau, M.
Author_Institution
CNET, LAB/JCM, Lannion, France
Volume
23
Issue
13
fYear
1987
Firstpage
684
Lastpage
686
Abstract
Erbium impurities were implanted in indium phosphide. The Er depth distributions are given for nonannealed and annealed substrates. It is shown that erbium has a very small diffusion coefficient, if any, in InP. The photoluminescence spectra show, after annealing at high temperature, the main erbium emission centred at 1.536μm. This emission is stronger after annealing at 700°C. Our results are the first evidence showing l.54μm emission at room temperature.
Keywords
III-V semiconductors; annealing; erbium; indium compounds; ion implantation; photoluminescence; 1.54 micron; 700 C; InP:Er; annealed substrates; annealing temperature; diffusion coefficient; emission at room temperature; ion implantation; photoluminescence spectra;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870488
Filename
4257822
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