DocumentCode :
1033874
Title :
Gunn effect bibliography
Author :
Gaylord, Thomas K. ; Shah, Pradeep L. ; Rabson, Thomas A.
Author_Institution :
Rice University, Houston, Tex.
Volume :
15
Issue :
10
fYear :
1968
fDate :
10/1/1968 12:00:00 AM
Firstpage :
777
Lastpage :
788
Abstract :
In view of the rapidly expanding interest and activity in the area of the Gunn effect, the following bibliography has been compiled for people who are studying or doing research in this area. The term "Gunn effect" is used, in general, to collectively describe a number of classes of bulk negative resistance behavior in semiconductors with energy band structures like that of GaAs. These modes of behavior include small-signal amplification, pure accumulation of space charge, mature dipole (true Gunn effect) mode. quenched accumulation (LSA) mode, and quenched dipole mode. These references deal with the theory, experimental results, and applications of the Gunn effect. Works of a fundamental nature concerning phenomena that are basic to all semiconductor behavior and other bulk negative resistance effects have not been included. Also, basic papers dealing with electron transport phenomena, such as hot electron theory and intervalley scattering, which are essential to a complete understanding of the Gunn effect and articles on the properties and band structure of GaAs, InP, CdTe, and other III-V compounds have not generally been included, although in certain cases they are listed if they have been frequently cited. As in the compilation of any bibliography, it is self-evident that some valuable and pertinent articles may have been overlooked.
Keywords :
Bibliographies; Conductivity; Electric breakdown; Electrons; Gallium arsenide; Germanium; Gunn devices; III-V semiconductor materials; Semiconductor diodes; Solids;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16514
Filename :
1475416
Link To Document :
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