Title :
Enhanced Schottky barrier heights on n-type Ga0.47In0.53As by Be implantation
Author :
Fernholz, G. ; Westphalen, R. ; Lange, W. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
Ion implantation of Be with extremely low energies of 2¿5 keV into n-type GalnAs was performed, leading to shallow, fully depleted p-layers. This allowed us to achieve barrier heights of up to 0¿6 eV, leading to well behaved diode characteristics.
Keywords :
III-V semiconductors; Schottky effect; beryllium; gallium arsenide; indium compounds; ion implantation; 2 to 5 keV; Ga0.47In0.53As:Be; III-V semiconductor; Schottky barrier heights; depleted p-layers; diode characteristics; ion implantation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870513
