• DocumentCode
    1033968
  • Title

    Enhanced Schottky barrier heights on n-type Ga0.47In0.53As by Be implantation

  • Author

    Fernholz, G. ; Westphalen, R. ; Lange, W. ; Beneking, H.

  • Author_Institution
    Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    23
  • Issue
    14
  • fYear
    1987
  • Firstpage
    722
  • Lastpage
    723
  • Abstract
    Ion implantation of Be with extremely low energies of 2¿5 keV into n-type GalnAs was performed, leading to shallow, fully depleted p-layers. This allowed us to achieve barrier heights of up to 0¿6 eV, leading to well behaved diode characteristics.
  • Keywords
    III-V semiconductors; Schottky effect; beryllium; gallium arsenide; indium compounds; ion implantation; 2 to 5 keV; Ga0.47In0.53As:Be; III-V semiconductor; Schottky barrier heights; depleted p-layers; diode characteristics; ion implantation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870513
  • Filename
    4257848
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1033968