Title :
Fully implanted GaAs millimetre-wave mixer diode using high energy implantation
Author :
Thompson, Paul ; Dietrich, H. ; Anand, Y. ; Higgins, V. ; Hillson, J.
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
Fully implanted GaAs millimetre-wave planar mixer diodes, suitable for monolithic integration, have been fabricated and tested. Multiple energy implantation, having a maximum energy of 6 MeV, was used to form the 3 ¿m-thick active layer. The DC and RF characteristics were comparable to state-of-the-art GaAs mixer diodes fabricated on epitaxial layers.
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; mixers (circuits); semiconductor diodes; solid-state microwave devices; 6 MeV; DC characteristics; GaAs; RF characteristics; active layer; high energy implantation; millimetre-wave mixer diode; monolithic integration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870515
