• DocumentCode
    1033989
  • Title

    High-purity germanium-sulphide glass for optoelectronic applications synthesised by chemical vapour deposition

  • Author

    Huang, C.-C. ; Hewak, D.W.

  • Author_Institution
    Optoelectronics Res. Centre, Univ. of Southampton, UK
  • Volume
    40
  • Issue
    14
  • fYear
    2004
  • fDate
    7/8/2004 12:00:00 AM
  • Firstpage
    863
  • Lastpage
    865
  • Abstract
    Germanium-sulphide glass has been fabricated directly by chemical vapour deposition in the form of thin films on semiconductor substrates and as a bulk glass. Analysis shows a high-purity amorphous material, which has high potential for the fabrication of the chalcogenide optical waveguides and devices.
  • Keywords
    Raman spectra; X-ray diffraction; chalcogenide glasses; chemical vapour deposition; germanium compounds; optical fabrication; optical films; optical waveguides; semiconductor growth; semiconductor thin films; GeSSi; Raman spectra; X-ray diffraction; bulk glass; chalcogenide optical waveguides; chemical vapour deposition; germanium sulphide glass; high purity germanium sulphide glass; high-purity amorphous material; optical device; optoelectronic applications; semiconductor substrates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20045141
  • Filename
    1315496
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1033989