Title :
Low-loss InGaAsP/InP submicron optical waveguides fabricated by ICP etching
Author :
Dupont, S. ; Beaurain, A. ; Miska, P. ; Zegaoui, M. ; Vilcot, J.-P. ; Li, H.-W. ; Constant, M. ; Decoster, D. ; Chazelas, J.
Author_Institution :
Inst. d´´Electronique, Univ. des Sci. et Technol. de Lille, Villeneuve d´´Ascq, France
fDate :
7/8/2004 12:00:00 AM
Abstract :
The fabrication and characterisation of low-loss InGaAsP/InP optical submicron waveguides made with ICP etching is reported. Their width ranges from 0.2 to 2 μm. For the 0.5 μm width, the propagation losses at λ=1.55 μm as low as 4.2 dB/mm have been measured.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical losses; optical waveguides; semiconductor devices; semiconductor epitaxial layers; semiconductor growth; sputter etching; 0.2 to 2 micron; 0.5 micron; 1.55 micron; InGaAsP-InP; inductively coupled plasma etching; low-loss InGaAsP/InP optical submicron waveguides; propagation losses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040502
