• DocumentCode
    1034016
  • Title

    Decoupled flux control for molecular beam epitaxy

  • Author

    Garrett, Patrick H. ; Heyob, Jeffrey J. ; Hunt, Victor J. ; LeClair, Steven R. ; Patterson, Oliver D.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
  • Volume
    6
  • Issue
    4
  • fYear
    1993
  • fDate
    11/1/1993 12:00:00 AM
  • Firstpage
    348
  • Lastpage
    356
  • Abstract
    Improvement of the manufacturing capability for the molecular beam epitaxy (MBE) process is demonstrated with respect to the consistent achievement of effusion cell flux stability of 1% of setpoint values. This performance was obtained by decoupling the principal sources of flux variability from each cell temperature control system including: cell shutter opening flux disturbances with implementation of a feedforward compensator that precisely cancels evaporant mass enthalpy transients; electric power frequency-correlation flux disturbances with substitution of heater DC drivers for the standard AC triac drivers; and flux process disorder resulting from coupled temperature controller proportional-integral-derivative (PID) tuning values with identification of decoupled trapezoidal PID tuning values
  • Keywords
    molecular beam epitaxial growth; process control; semiconductor device manufacture; semiconductor epitaxial layers; semiconductor growth; temperature control; three-term control; PID tuning; cell shutter opening flux disturbances; cell temperature control system; coupled temperature controller; effusion cell flux stability; electric power frequency-correlation flux disturbances; feedforward compensator; flux process disorder; flux variability; heater DC drivers; manufacturing capability; mass enthalpy transients; molecular beam epitaxy; setpoint values; Frequency; Manufacturing processes; Molecular beam epitaxial growth; Pi control; Stability; Temperature control; Three-term control; Thyristors; Tuning; Weight control;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.267645
  • Filename
    267645