Title :
Effect of process parameters on plasma-enhanced chemical vapour deposition of tungsten
Author :
Hodson, C.M.T. ; Wood, Jo
Author_Institution :
University of York, Department of Electronics, York, UK
Abstract :
Films of tungsten have been deposited on substrates of silicon by plasma-enhanced chemical vapour deposition, using the reaction of tungsten hexafluoride and hydrogen. The sheet resistance and adhesion of the films has been studied as a function of substrate temperature, gas composition and flow rate, and other reaction parameters, and an activation energy of 0.23 eV is proposed for the reaction. Reliable tungsten films with sheet resistances of the order of 1¿/¿ can be produced.
Keywords :
adhesion; chemical vapour deposition; electronic conduction in metallic thin films; metallisation; plasma deposition; tungsten; Si substrate; W-Si; activation energy; adhesion; flow rate; gas composition; metallisation; plasma enhanced CVD; process parameters; sheet resistance; substrate temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870520
