Title :
1.55 μm bottom-emitting InAlGaAs VCSELs with Al2O3/a-Si thin-film pairs as top mirror
Author :
Song, H.-W. ; Han, W.S. ; Kim, J.-H. ; Kwon, O.K. ; Ju, Y.-G. ; Lee, J.H. ; KoPark, S.-H. ; Kang, S.-G.
Author_Institution :
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
7/8/2004 12:00:00 AM
Abstract :
A a 1.55 μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapour deposition is presented. Al2O3/a-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through singlemode fibre are reported at a speed of 2.5 Gbit/s.
Keywords :
III-V semiconductors; MOCVD; alumina; aluminium compounds; amorphous semiconductors; elemental semiconductors; fibre lasers; gallium arsenide; indium compounds; optical modulation; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; silicon; surface emitting lasers; 1.5 micron; 2.5 Gbit/s; Al2O3-Si thin film mirror; InAlGaAs-Al2O3-Si; InAlGaAs/InAlAs epitaxial layers; InP; bottom emitting VCSEL; bottom emitting vertical cavity surface emitting laser; direct modulation; metalorganic chemical vapour deposition; singlemode fibre;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045240
