Title :
2.36 μm diode pumped VCSEL operating at room temperature in continuous wave with circular TEM00 output beam
Author :
Cerutti, L. ; Garnache, A. ; Ouvrard, A. ; Garcia, M. ; Cerda, E. ; Genty, F.
Author_Institution :
Univ. of Montpellier, France
fDate :
7/8/2004 12:00:00 AM
Abstract :
Operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical cavity surface emitting laser emitting near 2.36 μm is reported. The epitaxial structure, grown on GaSb by molecular beam epitaxy consists of a GaSb/AlAsSb Bragg reflector and a GaInAsSb/AlGaAsSb active region. A circular TEM00 low-divergence laser operation is demonstrated in continuous-wave mode operation from 268 up to 308K. A threshold of 5.5 kW/cm2 at 268K has been measured.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical pumping; photoluminescence; quantum well lasers; semiconductor epitaxial layers; surface emitting lasers; vapour deposited coatings; 2.36 micron; 268 to 308 K; AlGaAsSb-GaInAsSb; GaSb; GaSb-AlAsSb Bragg reflector; circular TEM00 output beam; continuous wave mode operation; diode pumped AlGaAsSb-GaInAsSb type-I quantum well laser; diode pumped VCSEL; epitaxial structure; molecular beam epitaxy; room temperature; vertical cavity surface emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045067
