Title :
Manufacturing study of yield and performance dependence on gate length of submicron AlInAs-GaInAs HEMTs
Author :
Larson, Lawrence ; Jelloian, Linda ; Rosenbaum, Steven ; Schmitz, Adele ; Thompson, Mark ; Lui, Mark ; Nguyen, L. ; Mishra, Umesh
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
fDate :
11/1/1993 12:00:00 AM
Abstract :
The fabrication, characterization, and statistical analysis of the performance and yield of AlInAs-GaInAs on InP low-noise high electron mobility transistors (HEMTs) with subquarter-micron T-gates fabricated with electron beam lithography are reported. This was undertaken to establish the manufacturability of submicron AlInAs-GaInAs HEMT technology for various low-noise microwave receiver applications. Excellent DC device yield (up to 90%) was obtained from devices to gate widths 300 μm and 1000 μm. A range of minimum noise figures between 0.026 to 0.5 dB at 2 GHz and 0.39 to 0.8 dB at 12 GHz were obtained for 0.15-μm and 0.20-μm gate length devices. The results establish the correlation between the noise figure and yield for this new class of microwave devices
Keywords :
III-V semiconductors; aluminium compounds; electron beam lithography; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; solid-state microwave devices; 0.15 micron; 0.20 micron; 0.26 to 0.5 dB; 0.39 to 0.8 dB; 1000 micron; 12 GHz; 2 GHz; 300 micron; DC device yield; electron beam lithography; gate length; low-noise microwave receiver applications; manufacturability; minimum noise figures; performance dependence; statistical analysis; submicron AlInAs-GaInAs HEMTs; subquarter-micron T-gates; yield; Electron beams; Fabrication; HEMTs; Indium phosphide; Lithography; MODFETs; Manufacturing; Microwave devices; Noise figure; Statistical analysis;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
