Title :
High-power vertical cavity surface emitting laser with good performances
Author :
Yan, C. ; Ning, Y. ; Qin, L. ; Liu, Y. ; Zhao, L. ; Wang, Q. ; Jin, Z. ; Sun, Y. ; Tao, G. ; Chu, G. ; Wang, C. ; Wang, L. ; Jiang, H.
Author_Institution :
Lab. of Excited State Processes, Chinese Acad. of Sci., Changchun, China
fDate :
7/8/2004 12:00:00 AM
Abstract :
Fabrication and performance of a high-power bottom-emitting InGaAs/GaAsP vertical cavity surface emitting laser with 430 μm diameter are described. The device realises the maximum room temperature CW output power 1.52 W at 987.6 nm with FWHM 0.8 nm. The far-field divergence angle is below 20°. Reliability test shows at 70°C an output power 0.35 W over 500 h.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser reliability; quantum well lasers; semiconductor growth; semiconductor thin films; surface emitting lasers; 0.35 W; 0.8 nm; 1.52 W; 293 to 298 K; 430 micron; 70 degC; 987.6 nm; CW output power; FWHM; GaAs; InGaAs-GaAsP; VCSEL; bottom-emitting InGaAs/GaAsP vertical cavity surface emitting laser; far-field divergence angle; high-power vertical cavity surface emitting laser fabrication; reliability test; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045045
