• DocumentCode
    1034105
  • Title

    High-efficiency X-band GaAs IMPATT diodes

  • Author

    Armstrong, L.D.

  • Volume
    15
  • Issue
    11
  • fYear
    1968
  • fDate
    11/1/1968 12:00:00 AM
  • Firstpage
    938
  • Lastpage
    939
  • Abstract
    Epitaxial GaAs diodes have been fabricated giving 651mW CW output power at 10 GHz under room temperature operation. A dc to RF efficiency of 10.1 percent was obtained from a diode operating CW while the measured output of another diode was over 20 mW for 3 mA dc with 70-volt biasing.
  • Keywords
    Capacitance; Circuit testing; Epitaxial layers; Etching; Fixtures; Frequency; Gallium arsenide; Power generation; Schottky diodes; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1968.16538
  • Filename
    1475440
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1034105