• DocumentCode
    1034194
  • Title

    2.0 W CW X-band GaInP/GaAs heterojunction bipolar transistor

  • Author

    Liu, W. ; Kim, T. ; Khatizbadeh, A.

  • Author_Institution
    Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA
  • Volume
    4
  • Issue
    1
  • fYear
    1994
  • Firstpage
    14
  • Lastpage
    16
  • Abstract
    We report 2.0 W CW (continuous wave) output power at 9.5 GHz with a GaInP/GaAs HBT having a total emitter area of 2×500 μm2. The collector-emitter bias dependence and the frequency dependence of the large-signal performance of both the 2×400 and 2×500 μm2 unit cells are described. The uniformity of the output power and power-added efficiency is also discussed.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power transistors; solid-state microwave devices; 2 W; 9.5 GHz; CW output power; GaInP-GaAs; GaInP/GaAs; HBT; SHF; X-band; collector-emitter bias dependence; continuous wave output; frequency dependence; heterojunction bipolar transistor; large-signal performance; power-added efficiency; Cutoff frequency; Frequency measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Power generation; Power measurement; Scanning electron microscopy; Tuning; Voltage;
  • fLanguage
    English
  • Journal_Title
    Microwave and Guided Wave Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1051-8207
  • Type

    jour

  • DOI
    10.1109/75.267680
  • Filename
    267680
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1034194