Low temperature preparation of bismuth-related ferroelectrics powder and thin films by hydrothermal synthesis

Author

Tho, Nguyen T. ; Inoue, Akihiro ; Noda, Minoru ; Okuyama, Masanori

Author_Institution

Osaka Univ., Osaka

Volume

54

Issue

12

fYear

2007

fDate

12/1/2007 12:00:00 AM

Firstpage

2603

Lastpage

2607

Abstract

Bi₄Ti₃O₁₂ (BIT) thin films were prepared by low temperature hydrothermal synthesis on Pt/TiOx/SiO₂/Si. Bi₄Ti₃O₁₂ or TiO₂ gel solution was formed and annealed at 350degC. The BIT thin films were crystallized as a Bi-layer structural ferroelectric. During the hydrothermal treatment, the TiO₂ anatase (101) peak appears and seems to play the role as an intermediate layer. Randomly oriented BIT thin films were obtained. As a result, the BIT thin films have ferroelectric property. The as-deposited BIT thin films include spherical grains with the grain size of 120 nm.

Keywords

annealing; bismuth compounds; crystallisation; ferroelectric thin films; grain size; nanostructured materials; powders; Bi-layer structural ferroelectrics; Bi₄Ti₃O₁₂; Pt-TiO_x-SiO₂-Si; TiO₂; anatase (101); annealing; crystallization; ferroelectric powder; ferroelectric thin films; gel solution; grain size; hydrothermal synthesis; spherical grains; Crystallization; Ferroelectric films; Ferroelectric materials; Powders; Random access memory; Semiconductor thin films; Sputtering; Temperature; Thin film circuits; Transistors; Bismuth; Crystallization; Electric Impedance; Electrochemistry; Materials Testing; Membranes, Artificial; Molecular Conformation; Nanostructures; Particle Size; Powders; Surface Properties; Temperature; Water;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/TUFFC.2007.586

Filename

4430050