Title :
Distributed-feedback, surface-emitting laser diode with lateral double heterostructure
Author :
Ogura, M. ; Mukai, Sonoyo
Author_Institution :
Electrochemical Laboratory, Tsukuba, Japan
Abstract :
The distributed-feedback, surface-emitting laser diode with lateral double heterostructure (LDH) is realised with the combination of molecular beam epitaxy (MBE) and selective liquid-phase-epitaxial (LPE) techniques. Stimulated emission with a spectrum width of 2¿3 nm was observed at the operating current of 100mA at ¿50°C, and 400 mA at room temperature.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; liquid phase epitaxial growth; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; stimulated emission; -50 degC; 100 mA; 400 mA; DFB laser; GaAs-AlGaAs laser; LPE; MBE; lateral double heterostructure; operating current; room temperature; semiconductor laser; stimulated emission; surface-emitting laser diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870537
