DocumentCode :
1034234
Title :
Extremely high-quality GaInAs/AlInAs single quantum wells grown by molecular beam epitaxy
Author :
Scott, E.G. ; Davey, S.T. ; Davies, G.J.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Volume :
23
Issue :
14
fYear :
1987
Firstpage :
761
Lastpage :
763
Abstract :
Conventional molecular beam epitaxy (MBE) has been used to grow extremely high-quality single quantum wells in the GaInAs/AlInAs materials system. GaInAs wells varying in thickness from 6.7 Ã… to 122Ã… are clearly resolved in the 4K photoluminescence spectrum. Emission from the narrowest quantum well was observed at 897.3 nm, which we believe is at a shorter wavelength than any previously reported for GalnAs quantum wells. The FWHM of the luminescence lines are, in some instances, nearly an order of magnitude narrower than any previously recorded for this materials system.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; spectral line breadth; 897.3 nm; GaInAs-AlInAs single quantum wells; III-V semiconductor; MBE; molecular beam epitaxy; photoluminescence spectrum; spectral linewidth;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870539
Filename :
4257874
Link To Document :
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