DocumentCode
1034234
Title
Extremely high-quality GaInAs/AlInAs single quantum wells grown by molecular beam epitaxy
Author
Scott, E.G. ; Davey, S.T. ; Davies, G.J.
Author_Institution
British Telecom Research Laboratories, Ipswich, UK
Volume
23
Issue
14
fYear
1987
Firstpage
761
Lastpage
763
Abstract
Conventional molecular beam epitaxy (MBE) has been used to grow extremely high-quality single quantum wells in the GaInAs/AlInAs materials system. GaInAs wells varying in thickness from 6.7 Ã… to 122Ã… are clearly resolved in the 4K photoluminescence spectrum. Emission from the narrowest quantum well was observed at 897.3 nm, which we believe is at a shorter wavelength than any previously reported for GalnAs quantum wells. The FWHM of the luminescence lines are, in some instances, nearly an order of magnitude narrower than any previously recorded for this materials system.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; spectral line breadth; 897.3 nm; GaInAs-AlInAs single quantum wells; III-V semiconductor; MBE; molecular beam epitaxy; photoluminescence spectrum; spectral linewidth;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870539
Filename
4257874
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