DocumentCode
1034240
Title
Surface charges and surface potential in silicon surface inversion layers
Author
Arnold, Emil
Author_Institution
North American Philips Company, Briarcliff Manor, N.Y.
Volume
15
Issue
12
fYear
1968
fDate
12/1/1968 12:00:00 AM
Firstpage
1003
Lastpage
1008
Abstract
The effect of interface charges on the channel conductance in MOS transistors has been investigated. It has been found that, by measuring the conductance as a function of temperature, it is possible to determine both the "fixed" interface charge which is independent of the surface potential and the charge trapped in surface states whose occupancy is a function of the surface potential. The characteristics of the two charge components are discussed. It appears that neither a continuous nor a delta-function energy distribution alone is adequate to describe the observed surface-state density.
Keywords
Charge measurement; Current measurement; Electron devices; Electron traps; Gold; Insulation; MOSFETs; Silicon; Solid state circuits; Surface treatment;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1968.16553
Filename
1475455
Link To Document