Title :
Four-channel wavelength demultiplexing with 25 nm spacing in variable refractive-index arrayed waveguides
Author :
Kawakita, Y. ; Shimotaya, S. ; Machida, D. ; Shimomura, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
fDate :
7/8/2004 12:00:00 AM
Abstract :
Wavelength demultiplexing in GaInAs/InP MQW-based straight arrayed waveguide with linearly varying refractive-index distribution yielded successful results. The fabrication of the device was achieved with single selective MOVPE growth, obtaining a wavelength separation with around 25 nm spacing and a free spectral range of approximately 100 nm.
Keywords :
III-V semiconductors; MOCVD; channel spacing; demultiplexing; gallium arsenide; indium compounds; optical waveguides; quantum well devices; refractive index; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 100 nm; 25 nm; GaInAs-InP; MOVPE growth; free spectral range; spacing; variable refractive index arrayed waveguide; wavelength demultiplexing; wavelength separation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040571
