DocumentCode
1034380
Title
Frequency conversion in IMPATT diodes
Author
Evans, W.J. ; Haddad, G.I.
Author_Institution
Bell Telephone Laboratories, Murray Hill, N. J.
Volume
16
Issue
1
fYear
1969
fDate
1/1/1969 12:00:00 AM
Firstpage
78
Lastpage
87
Abstract
A large-signal model of the Read-type IMPATT diode has been used to analyze the frequency-mixing properties of the oscillating diode. The self-oscillating, two-port frequency converter is described in terms of its short-circuit admittance parameters. It is shown that in the proper circuit, parametric frequency conversion may result in a negative conductance at the input and output ports of the converter. Therefore, high-gain frequency conversion and parametric amplification are possible. Under some conditions, spurious oscillations may occur due to this negative conductance. Experimental circuits have been built which demonstrate conversion gain and parametric amplification and confirm qualitatively the theoretical results. It is also shown experimentally that some of the sideband noise of the IMPATT oscillator is due to low-frequency noise which is up converted from the bias circuit. Some of this noise can be eliminated by proper circuit design.
Keywords
Circuit noise; Diodes; Electrons; Frequency conversion; Ionization; Laboratories; Low-frequency noise; Nonlinear equations; Physics; Poisson equations;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1969.16567
Filename
1475610
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