• DocumentCode
    1034380
  • Title

    Frequency conversion in IMPATT diodes

  • Author

    Evans, W.J. ; Haddad, G.I.

  • Author_Institution
    Bell Telephone Laboratories, Murray Hill, N. J.
  • Volume
    16
  • Issue
    1
  • fYear
    1969
  • fDate
    1/1/1969 12:00:00 AM
  • Firstpage
    78
  • Lastpage
    87
  • Abstract
    A large-signal model of the Read-type IMPATT diode has been used to analyze the frequency-mixing properties of the oscillating diode. The self-oscillating, two-port frequency converter is described in terms of its short-circuit admittance parameters. It is shown that in the proper circuit, parametric frequency conversion may result in a negative conductance at the input and output ports of the converter. Therefore, high-gain frequency conversion and parametric amplification are possible. Under some conditions, spurious oscillations may occur due to this negative conductance. Experimental circuits have been built which demonstrate conversion gain and parametric amplification and confirm qualitatively the theoretical results. It is also shown experimentally that some of the sideband noise of the IMPATT oscillator is due to low-frequency noise which is up converted from the bias circuit. Some of this noise can be eliminated by proper circuit design.
  • Keywords
    Circuit noise; Diodes; Electrons; Frequency conversion; Ionization; Laboratories; Low-frequency noise; Nonlinear equations; Physics; Poisson equations;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1969.16567
  • Filename
    1475610