DocumentCode :
1034492
Title :
A slide rule for computing UF and the bulk doping from MIS-capacitor high-frequency C-V curves
Author :
Pierret, R.F. ; Sah, C.T.
Volume :
16
Issue :
1
fYear :
1969
fDate :
1/1/1969 12:00:00 AM
Firstpage :
140
Lastpage :
147
Abstract :
A slide rule has been developed for the rapid and accurate calculation of the normalized doping parameter UF and the bulk doping of silicon substrates from high-frequency MIS-capacitor 
data. The slide rule can be employed for ambient temperatures from -20 to 100°C, and for a wide range of insulator thicknesses and dielectric constants.
data. The slide rule can be employed for ambient temperatures from -20 to 100°C, and for a wide range of insulator thicknesses and dielectric constants.Keywords :
Capacitance; Capacitance-voltage characteristics; Dielectric constant; Dielectric substrates; Dielectrics and electrical insulation; Permittivity; Semiconductor device doping; Silicon; Temperature dependence; Temperature distribution;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1969.16576
Filename :
1475619
Link To Document :
