DocumentCode
1034502
Title
Theory of cylindrically symmetric unijunction transistors
Author
Linder, J.S.
Volume
16
Issue
1
fYear
1969
fDate
1/1/1969 12:00:00 AM
Firstpage
147
Lastpage
149
Abstract
A general theory for near-intrinsic homogenous semiconductor material is extended to the base region of an ideal cylindrical-geometry unijunction transistor. The theory predicts static emitter characteristics for planar geometries with cylindrical symmetry. These predicted characteristics include the effects of drift, diffusion, and simple recombination, and qualitatively agree with experimental data at high injection.
Keywords
Analytical models; Charge carrier processes; Conducting materials; Geometry; Germanium; Mathematical model; Radiative recombination; Semiconductor materials; Steady-state; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1969.16577
Filename
1475620
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