DocumentCode :
1034587
Title :
Theory and experiments of low-frequency generation-recombination noise in MOS transistors
Author :
Yau, Leopoldo D. ; Sah, Chih-Tang
Author_Institution :
University of Illinois, Urbana, Ill.
Volume :
16
Issue :
2
fYear :
1969
fDate :
2/1/1969 12:00:00 AM
Firstpage :
170
Lastpage :
177
Abstract :
A theoretical model for the generation-recombination (g-r) noise in MOS transistors is presented. This model takes into account the charge induced on all electrodes by the charge fluctuation of the impurity center in the depletion region. The model gives a finite equivalent gate noise resistance at saturation. Gold-doped and no-gold control devices were fabricated to verify the theory experimentally. The drain-voltage dependence of the g-r noise, which is shown to be distinctly different from the 1/f noise and thermal noise, is used to check the theory. Good agreement between theory and experiment is obtained.
Keywords :
Charge carrier processes; Electrodes; Electron emission; Fluctuations; Frequency; Impurities; Low-frequency noise; MOSFETs; Noise generators; Semiconductor device noise;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1969.16586
Filename :
1475628
Link To Document :
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