Title :
LSA diode theory for long samples
Author :
Olsson, Kjell O I
Author_Institution :
Chalmers University of Technology, Gothenburg, Sweden
fDate :
2/1/1969 12:00:00 AM
Abstract :
An analytic theory of the LSA diode oscillator is developed. Closed expressions for the output power efficiency, conductance, etc., are given. The physics of the diode operation is discussed and limiting values of the doping-to-frequency ratio are obtained. Doping inhomogeneity giving rise to the growth of Gunn domains is shown to seriously affect the LSA operation. The formulas are presented in a form which is directly based on material and circuit parameters. The results are found to be in good agreement with experimental data.
Keywords :
Contact resistance; Diodes; Electron devices; Equivalent circuits; Gallium arsenide; Gunn devices; Microwave communication; Microwave devices; Voltage; Voltage-controlled oscillators;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1969.16590
