DocumentCode

1034802

Title

Bipolar integrated circuits formed in p-type epitaxial layers

Author

Murphy, B.T.

Volume

16

Issue

2

fYear

1969

fDate

2/1/1969 12:00:00 AM

Firstpage

235

Lastpage

236

Keywords

Admittance; Bipolar integrated circuits; Current density; Electron mobility; Epitaxial layers; Frequency; Ionization; Oscillators; Semiconductor diodes; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1969.16607

Filename

1475649