DocumentCode
1034836
Title
InGaAsP buried heterostructure laser with 22 GHz bandwidth and high modulation efficiency
Author
Olshansky, R. ; Powazinik, W. ; Hill, P. ; Lanzisera, V. ; Lauer, R.B.
Author_Institution
GTE Laboratories Inc., Waltham, USA
Volume
23
Issue
16
fYear
1987
Firstpage
839
Lastpage
841
Abstract
A best-ever 22 GHz CW 3dB bandwidth is reported for a 1.3 ¿m fan InGaAsP vapour-phase-regrown buried heterostructure laser. The device is shown to have excellent modulation efficiency from DC to 20 GHz.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; 1.3 micron; 22 GHz; CW operation; InGaAsP laser; modulation efficiency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870594
Filename
4257931
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