Title :
Very low-noise HEMTs using a 0.2¿m T-gate
Author :
Jones, W. Linwood ; Ageno, S.K. ; Sato, T.Y.
Author_Institution :
TRW Electronic System Group, Redondo Beach, USA
Abstract :
A very low-noise, high-electron-mobility transistor has been fabricated using a 0.2 ¿m T-shaped gate. At 12 GHz, a noise figure of 0.61 dB with an associated gain of 12.58dB has recently been measured. This is the lowest noise figure ever reported for an HEMT at this frequency
Keywords :
high electron mobility transistors; solid-state microwave devices; 0.2 micron; 0.61 dB; 12 GHz; 12.58 dB; HEMT; T-shaped gate; high-electron-mobility transistor; noise figure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870597
