Title :
Reactive ion etching of GaAs using a mixture of methane and hydrogen
Author :
Cheung, Ray ; Thoms, S. ; Beamont, S.P. ; Doughty, G. ; Law, V. ; Wilkinson, C.D.W.
Author_Institution :
University of Glasgow, Nanoelectronics Group, Department of Electronics & Electrical Engineering, Glasgow, UK
Abstract :
A dry etching technique which is capable of producing lowdamage, high-aspect-ratio structures on a nanometric scale in GaAs is described. The reactive ion etching employs a mixture of methane and hydrogen; details of the optimum conditions are given.
Keywords :
III-V semiconductors; semiconductor technology; sputter etching; GaAs; H2; RIE; dry etching technique; high-aspect-ratio structures; low-damage; methane; nanometric scale; optimum conditions; sputter etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870606
