• DocumentCode
    1034972
  • Title

    Reactive ion etching of GaAs using a mixture of methane and hydrogen

  • Author

    Cheung, Ray ; Thoms, S. ; Beamont, S.P. ; Doughty, G. ; Law, V. ; Wilkinson, C.D.W.

  • Author_Institution
    University of Glasgow, Nanoelectronics Group, Department of Electronics & Electrical Engineering, Glasgow, UK
  • Volume
    23
  • Issue
    16
  • fYear
    1987
  • Firstpage
    857
  • Lastpage
    859
  • Abstract
    A dry etching technique which is capable of producing lowdamage, high-aspect-ratio structures on a nanometric scale in GaAs is described. The reactive ion etching employs a mixture of methane and hydrogen; details of the optimum conditions are given.
  • Keywords
    III-V semiconductors; semiconductor technology; sputter etching; GaAs; H2; RIE; dry etching technique; high-aspect-ratio structures; low-damage; methane; nanometric scale; optimum conditions; sputter etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870606
  • Filename
    4257943
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1034972