• DocumentCode
    1035073
  • Title

    Resonant-tunnelling hot-electron transistor (RHET) using a GaInAs/(AlGa)InAs heterostructure

  • Author

    Imamura, Kousuke ; Muto, Salvatore ; Ohnishi, H. ; Fujii, Teruya ; Yokoyama, Naoki

  • Author_Institution
    Fujitsu Limited, Atsugi, Japan
  • Volume
    23
  • Issue
    17
  • fYear
    1987
  • Firstpage
    870
  • Lastpage
    871
  • Abstract
    A common-emitter current gain of 10 has been measured at 77 K for a 100 nm-base resonant-tunnelling hot-electron transistor (RHET) using a GaInAs/(AlGa)InAs heterostructure. The current gain for 25 nm-base RHETs has reached 25, which is the highest value yet reported for hot-electron transistors, and the collector current peak-to-valley ratio has reached 15.0 for the same device.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; 100 nm; 25 nm; 77 K; GaInAs-AlGaInAs heterostructure; RHET; collector current peak-to-valley ratio; current gain; resonant-tunnelling hot-electron transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870616
  • Filename
    4257954
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035073