Title :
Resonant-tunnelling hot-electron transistor (RHET) using a GaInAs/(AlGa)InAs heterostructure
Author :
Imamura, Kousuke ; Muto, Salvatore ; Ohnishi, H. ; Fujii, Teruya ; Yokoyama, Naoki
Author_Institution :
Fujitsu Limited, Atsugi, Japan
Abstract :
A common-emitter current gain of 10 has been measured at 77 K for a 100 nm-base resonant-tunnelling hot-electron transistor (RHET) using a GaInAs/(AlGa)InAs heterostructure. The current gain for 25 nm-base RHETs has reached 25, which is the highest value yet reported for hot-electron transistors, and the collector current peak-to-valley ratio has reached 15.0 for the same device.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; 100 nm; 25 nm; 77 K; GaInAs-AlGaInAs heterostructure; RHET; collector current peak-to-valley ratio; current gain; resonant-tunnelling hot-electron transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870616
