Title :
New structure of three-terminal GaAs p+-n--δ(p+)-n--n+ switching device prepared by molecular beam epitaxy
Author :
Wang, Y.H. ; Yarn, K.F. ; Chan, C.Y. ; Jame, M.S.
Author_Institution :
National Cheng Kung University, Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, Tainan, Republic of China
Abstract :
The concept to modulate the internal barrier of a regenerative switching device is proposed. A new structure of three-terminal GaAs p+-n--δ(p+)-n--n+ switching device prepared by molecular beam epitaxy is successfully developed. The third terminal was directly contacted to the δ(p+) barrier using the V-groove etching technique, in which the δ(p+) barrier height can be directly modulated by the external voltage. It is a voltage-controlled device.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor switches; GaAs switch; MBE; V-groove etching technique; internal barrier modulation; molecular beam epitaxy; regenerative switching device; three-terminal switching device; voltage-controlled device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870618
