• DocumentCode
    1035136
  • Title

    22 GHz 1/4 frequency divider using AlGaAs/GaAs HBTs

  • Author

    Yamauchi, Yuji ; Nagata, Kazuyuki ; Nakajima, O. ; Ito, H. ; Nittono, T. ; Ishibashi, Takayuki

  • Author_Institution
    NTT Electrical Communications Laboratories, Atsugi, Japan
  • Volume
    23
  • Issue
    17
  • fYear
    1987
  • Firstpage
    881
  • Lastpage
    882
  • Abstract
    A divide-by-four frequency divider using AIGaAs/GaAs HBTs with GalnAs/GaAs emitter cap layers was designed and fabricated. A maximum toggle frequency of 22.15 GHz was obtained at a power supply voltage of 9 V and a total power dissipation of 712 mW. The minimum input signal power was under 0dBm and the free-running frequency was as high as 20 GHz.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar integrated circuits; frequency dividers; gallium arsenide; 22 GHz; 712 mW; 9 V; AlGaAs-GaAs; HBT; digital circuits; divide-by-four frequency divider; free-running frequency; frequency divider; maximum toggle frequency; minimum input signal power; power supply voltage; total power dissipation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870623
  • Filename
    4257961