• DocumentCode
    1035203
  • Title

    Effect of photochemical etching on interface state density of Ga0.47In0.53As metal/insulator/semiconductor diodes

  • Author

    Aoki, A. ; Miyoshi, S. ; Shirafuji, J.

  • Author_Institution
    Osaka University, Department of Electrical Engineering, Faculty of Engineering, Suita, Japan
  • Volume
    23
  • Issue
    17
  • fYear
    1987
  • Firstpage
    891
  • Lastpage
    892
  • Abstract
    A metal/insulator/semiconductor (MIS) structure of Ga0.47In0.53As has been prepared by applying an excimer laser photo-CVD process to depositing an SiNx insulating layer. It is found that interface state densities can be remarkably reduced by in situ photochemical etching with CC14 or CH3Br gases prior to SiNx deposition. A minimum value of the U-shape profile of the interface state density as low as 5 × 1011 cm-2eV-1is attained.
  • Keywords
    III-V semiconductors; etching; gallium arsenide; indium compounds; metal-insulator-semiconductor structures; semiconductor technology; Ga0.47In0.53As; MIS structure; SiNx deposition; SiNx film; bromomethane; excimer laser photo-CVD process; in situ photochemical etching; interface state density; tetrachloromethane;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870630
  • Filename
    4257968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035203