• DocumentCode
    1035212
  • Title

    Performance characteristics of high-brightness, CW, diode laser arrays

  • Author

    Welch, D.F. ; Devito, M. ; Cardinal, M. ; Abraham, M. ; Kung, Hsin-Wen ; Harnagel, G. ; Cross, Philip ; Scifres, D. ; Streifer, W.

  • Author_Institution
    Spectra Diode Laboratories, Inc., San Jose, USA
  • Volume
    23
  • Issue
    17
  • fYear
    1987
  • Firstpage
    892
  • Lastpage
    893
  • Abstract
    Recently developed, high-brightness diode laser arrays have been tested at 50°C at output powers of 0.5 W CW and 1.0W CW from 100¿m- and 200¿m-wide active regions, respectively. The extrapolated lifetimes at room temperature exceed 40000 h. The maximum CW power output prior to catastrophic degradation of the facets is 2.0 W for the 100¿m device and greater than 3 W for the 200¿m-aperture device.
  • Keywords
    semiconductor junction lasers; 0.5 to 3 W; 100 micron; 200 micron; 40000 h; 50 C; CW lasers; high-brightness diode laser arrays; lifetimes at room temperature; multistripe array laser diodes; output powers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870631
  • Filename
    4257969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035212