• DocumentCode
    1035222
  • Title

    Very low threshold current density of a GaInP/AlGaInP double-heterostructure laser grown by MOCVD

  • Author

    Nakano, K. ; Ikeda, M. ; Toda, A. ; Kojima, C.

  • Author_Institution
    Sony Corporation, Research Center, Yokohama, Japan
  • Volume
    23
  • Issue
    17
  • fYear
    1987
  • Firstpage
    894
  • Lastpage
    895
  • Abstract
    A GaInP/AlGaInP broad-area (60 × 500 ¿m2) laser grown by MOCVD has obtained a very low threshold current density Jth of 1.1 kA/cm2. The dependence of Jth and differential quantum efficiency on cavity length was measured to determine internal quantum efficiency, losses and the gain constant, which were found to be comparable to these characteristics in an AlGaAs laser.
  • Keywords
    III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium compounds; indium compounds; semiconductor junction lasers; 500 micron; DH lasers; GaInP-AlGaInP lasers; MOCVD; cavity length; differential quantum efficiency; double-heterostructure laser; gain constant; internal quantum efficiency; losses; low threshold current density; visible light lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870632
  • Filename
    4257970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035222